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| MLN1033F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1033F is Designed for Class A Linear Applications up to 1.0 GHz. PACKAGE STYLE .250 2L FLG A OD C E .060 x 45 CHAMFER FEATURES: * Class A Operation * PG = 12 dB at 2.0 W/1.0 GHz * OmnigoldTM Metalization System B G L H J F I K M NP MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG JC 0.5 A 40 V 25 V 3.5 V 20.6 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 17 C/W DIM A B C D E F G H I J K L M N P .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .110 / 2.79 .117 / 2.97 MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 ORDER CODE: ASI10626 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO hFE PG TC = 25 C NONETEST CONDITIONS IC = 2.0 mA IC = 5.0 mA IE = 2.0 mA VCE = 5.0 V VCE = 18 V POUT = 2.0 W IC = 400 mA ICQ = 220 mA f = 1.0 GHz MINIMUM TYPICAL MAXIMUM 40 25 3.5 15 12 150 UNITS V V V --dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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